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Quantum strain sensor with a topological insulator HgTe quantum dot
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The pre...
में बचाया:
| मुख्य लेखकों: | , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Publishing Group
2014
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4014981/ https://ncbi.nlm.nih.gov/pubmed/24811674 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep04903 |
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