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Non-thermal resistive switching in Mott insulator nanowires
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field...
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| Pubblicato in: | Nat Commun |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2020
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7293290/ https://ncbi.nlm.nih.gov/pubmed/32532988 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-16752-1 |
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