InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The...

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Vydáno v:Materials (Basel)
Hlavní autoři: Zhukov, Alexey E., Kryzhanovskaya, Natalia V., Moiseev, Eduard I., Dragunova, Anna S., Tang, Mingchu, Chen, Siming, Liu, Huiyun, Kulagina, Marina M., Kadinskaya, Svetlana A., Zubov, Fedor I., Mozharov, Alexey M., Maximov, Mikhail V.
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI 2020
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7287998/
https://ncbi.nlm.nih.gov/pubmed/32443456
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13102315
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