Llwytho...
Infinite Selectivity of Wet SiO(2) Etching in Respect to Al
We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO(2) as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent at...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Micromachines (Basel) |
|---|---|
| Prif Awduron: | , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI
2020
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7230285/ https://ncbi.nlm.nih.gov/pubmed/32244504 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11040365 |
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