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Infinite Selectivity of Wet SiO(2) Etching in Respect to Al
We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO(2) as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent at...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7230285/ https://ncbi.nlm.nih.gov/pubmed/32244504 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11040365 |
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