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Interface-Induced WSe(2) In-plane Homojunction for High-Performance Photodetection
2D transition metal dichalcogenides (TMDCs) have been extensively attractive for nano-electronics and nano-optoelectronics due to their unique properties. Especially, WSe(2), having bipolar carrier transport ability and sizable bandgap, is a promising candidate for future photodetectors. Here, we re...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2020
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7225239/ https://ncbi.nlm.nih.gov/pubmed/32410135 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03342-9 |
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