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Selective Growth of WSe(2) with Graphene Contacts
Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky bar...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7067944/ https://ncbi.nlm.nih.gov/pubmed/32166402 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-3261-y |
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