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Electronegativity and doping in Si(1-x)Ge(x) alloys
Silicon germanium alloys are technologically important in microelectronics but also they are an important paradigm and model system to study the intricacies of the defect processes on random alloys. The key in semiconductors is that dopants and defects can tune their electronic properties and althou...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7198609/ https://ncbi.nlm.nih.gov/pubmed/32366971 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-64403-8 |
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