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Electronegativity and doping in Si(1-x)Ge(x) alloys
Silicon germanium alloys are technologically important in microelectronics but also they are an important paradigm and model system to study the intricacies of the defect processes on random alloys. The key in semiconductors is that dopants and defects can tune their electronic properties and althou...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7198609/ https://ncbi.nlm.nih.gov/pubmed/32366971 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-64403-8 |
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