Načítá se...
Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates
We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by f...
Uloženo v:
| Vydáno v: | Nanomaterials (Basel) |
|---|---|
| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2020
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7153476/ https://ncbi.nlm.nih.gov/pubmed/32168923 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10030508 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|