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Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires
In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etchin...
Gorde:
| Argitaratua izan da: | Nanomaterials (Basel) |
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| Egile Nagusiak: | , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI
2020
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7152846/ https://ncbi.nlm.nih.gov/pubmed/32106503 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10030404 |
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