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AlGaN/GaN FETs looms over GaAs technology
In spite of deep concerns about the spread of severe acute respiratory syndrome in Asia, the 5th International Conference on Nitride Semiconductors at Nara was well attended with 442 presentations (24 countries; 60% from overseas), lively rump sessions and active participation by key figures includi...
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| Publicado en: | III-Vs Review |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Elsevier Science Ltd.
2003
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7147868/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/S0961-1290(03)00788-9 |
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