Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This...

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Dades bibliogràfiques
Publicat a:Carbon N Y
Autors principals: Rigosi, Albert F., Patel, Dinesh, Marzano, Martina, Kruskopf, Mattias, Hill, Heather M., Jin, Hanbyul, Hu, Jiuning, Walker, Angela R. Hight, Ortolano, Massimo, Callegaro, Luca, Liang, Chi-Te, Newell, David B.
Format: Artigo
Idioma:Inglês
Publicat: 2019
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC7067286/
https://ncbi.nlm.nih.gov/pubmed/32165760
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.carbon.2019.08.002
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