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Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This...
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| Pubblicato in: | Carbon N Y |
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| Autori principali: | , , , , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7067286/ https://ncbi.nlm.nih.gov/pubmed/32165760 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.carbon.2019.08.002 |
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