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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved be...
में बचाया:
| में प्रकाशित: | Sci Adv |
|---|---|
| मुख्य लेखकों: | , , , , , , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
American Association for the Advancement of Science
2020
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7048425/ https://ncbi.nlm.nih.gov/pubmed/32158940 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.aay2830 |
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