The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0...

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Veröffentlicht in:Sci Rep
Hauptverfasser: Shin, Sang-Yeol, Choi, J. M., Seo, Juhee, Ahn, Hyung-Woo, Choi, Yong Gyu, Cheong, Byung-ki, Lee, Suyoun
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group 2014
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Article
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4235286/
https://ncbi.nlm.nih.gov/pubmed/25403772
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep07099
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