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The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se
The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4235286/ https://ncbi.nlm.nih.gov/pubmed/25403772 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep07099 |
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