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Modeling and Analysis of v(gs) Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module
In this work, a 1200V/200A full-SiC half-bridge power module was fabricated for high-power high-frequency application, and the characteristics of gate-source voltage ([Formula: see text]) at turn-on transient under different output power was investigated via experiments, modeling, and simulation. Al...
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| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7019688/ https://ncbi.nlm.nih.gov/pubmed/31861314 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11010005 |
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