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Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device

We demonstrate the process of obtaining memristive multi-states Hall resistance (R(H)) change in a single Hall cross (SHC) structure. Otherwise, the working mechanism successfully mimics the behavior of biological neural systems. The motion of domain wall (DW) in the SHC was used to control the asce...

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Publicat a:Sci Rep
Autors principals: Kim, Y.-U., Kwon, J., Hwang, H.-K., Purnama, I., You, C.-Y.
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2020
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6987114/
https://ncbi.nlm.nih.gov/pubmed/31992806
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-58223-z
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