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Significant enhancement of the bias stability of Zn-O-N thin-film transistors via Si doping
Si doping was used to significantly improve the bias stability of ZnON thin-film transistors. Si 3 W (~1%) doped ZnON TFTs showed a saturation mobility of 19.70 cm(2)/Vs along with remarkable improvements in the threshold voltage shift for negative gate bias stress (NBS) within 1.69 V. The effects o...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6970993/ https://ncbi.nlm.nih.gov/pubmed/31959828 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-57642-2 |
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