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Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C
III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the...
Zapisane w:
| Wydane w: | Proc Natl Acad Sci U S A |
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| Główni autorzy: | , , , , , , , , , |
| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
National Academy of Sciences
2020
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| Hasła przedmiotowe: | |
| Dostęp online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6969534/ https://ncbi.nlm.nih.gov/pubmed/31892540 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1915786117 |
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