Strain-engineered growth of two-dimensional materials

The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-misma...

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Bibliografiset tiedot
Julkaisussa:Nat Commun
Päätekijät: Ahn, Geun Ho, Amani, Matin, Rasool, Haider, Lien, Der-Hsien, Mastandrea, James P., Ager III, Joel W., Dubey, Madan, Chrzan, Daryl C., Minor, Andrew M., Javey, Ali
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group UK 2017
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Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5606995/
https://ncbi.nlm.nih.gov/pubmed/28931806
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00516-5
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