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Strain-engineered growth of two-dimensional materials
The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-misma...
Tallennettuna:
| Julkaisussa: | Nat Commun |
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| Päätekijät: | , , , , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group UK
2017
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5606995/ https://ncbi.nlm.nih.gov/pubmed/28931806 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00516-5 |
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