Llwytho...
Strain-engineered growth of two-dimensional materials
The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-misma...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Nat Commun |
|---|---|
| Prif Awduron: | , , , , , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Nature Publishing Group UK
2017
|
| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5606995/ https://ncbi.nlm.nih.gov/pubmed/28931806 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00516-5 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|