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Strain-engineered growth of two-dimensional materials
The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-misma...
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| Publicat a: | Nat Commun |
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| Autors principals: | , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5606995/ https://ncbi.nlm.nih.gov/pubmed/28931806 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00516-5 |
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