Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bis­muth thin films

The preferred orientation growth characteristics and surface roughness of polycrystalline bis­muth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in de...

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Vydáno v:IUCrJ
Hlavní autoři: Wang, Nan, Dai, Yu-Xiang, Wang, Tian-Lin, Yang, Hua-Zhe, Qi, Yang
Médium: Artigo
Jazyk:Inglês
Vydáno: International Union of Crystallography 2020
Témata:
Research Papers
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6949596/
https://ncbi.nlm.nih.gov/pubmed/31949904
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S2052252519015458
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