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Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films
The preferred orientation growth characteristics and surface roughness of polycrystalline bismuth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in de...
Gorde:
| Argitaratua izan da: | IUCrJ |
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| Egile Nagusiak: | , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
International Union of Crystallography
2020
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6949596/ https://ncbi.nlm.nih.gov/pubmed/31949904 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S2052252519015458 |
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