Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Perpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this structure, a sub-nanometer CoFeB layer has the pot...

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Publicat a:Sci Rep
Autors principals: Iwata-Harms, Jodi M., Jan, Guenole, Serrano-Guisan, Santiago, Thomas, Luc, Liu, Huanlong, Zhu, Jian, Lee, Yuan-Jen, Le, Son, Tong, Ru-Ying, Patel, Sahil, Sundar, Vignesh, Shen, Dongna, Yang, Yi, He, Renren, Haq, Jesmin, Teng, Zhongjian, Lam, Vinh, Liu, Paul, Wang, Yu-Jen, Zhong, Tom, Fukuzawa, Hideaki, Wang, Po-Kang
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2019
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6923472/
https://ncbi.nlm.nih.gov/pubmed/31857596
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-54466-7
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