Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (V(Si)), silicon and carbon divacancies (V(C)V(Si)), and nitrogen vacancies (N(C)V(Si)) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a dia...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Beilstein J Nanotechnol
Main Authors: Castelletto, Stefania, Al Atem, Abdul Salam, Inam, Faraz Ahmed, von Bardeleben, Hans Jürgen, Hameau, Sophie, Almutairi, Ahmed Fahad, Guillot, Gérard, Sato, Shin-ichiro, Boretti, Alberto, Bluet, Jean Marie
Formato: Artigo
Idioma:Inglês
Publicado em: Beilstein-Institut 2019
Assuntos:
Full Research Paper
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6902882/
https://ncbi.nlm.nih.gov/pubmed/31886115
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.10.229
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados