Probing the edge-related properties of atomically thin MoS(2) at nanoscale

Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spec...

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Vydáno v:Nat Commun
Hlavní autoři: Huang, Teng-Xiang, Cong, Xin, Wu, Si-Si, Lin, Kai-Qiang, Yao, Xu, He, Yu-Han, Wu, Jiang-Bin, Bao, Yi-Fan, Huang, Sheng-Chao, Wang, Xiang, Tan, Ping-Heng, Ren, Bin
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group UK 2019
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6895227/
https://ncbi.nlm.nih.gov/pubmed/31804496
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-13486-7
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