Carrier Depletion near the Grain Boundary of a SiC Bicrystal

Silicon carbide (SiC) bicrystals were prepared by diffusion bonding, and their grain boundary was observed using scanning transmission electron microscopy. The n-type electrical conductivity of a SiC single crystal was confirmed by scanning nonlinear dielectric microscopy (SNDM). Dopant profiling of...

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Publicat a:Sci Rep
Autors principals: Kim, Young-Wook, Tochigi, Eita, Tatami, Junichi, Kim, Yong-Hyeon, Jang, Seung Hoon, Javvaji, Srivani, Jung, Jeil, Kim, Kwang Joo, Ikuhara, Yuichi
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2019
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6884474/
https://ncbi.nlm.nih.gov/pubmed/31784638
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-54525-z
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