Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

[Image: see text] Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dr...

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Bibliografiske detaljer
Udgivet i:ACS Omega
Main Authors: Mercado, Elisha, Zhou, Yan, Xie, Yong, Zhao, Qinghua, Cai, Hui, Chen, Bin, Jie, Wanqi, Tongay, Sefaattin, Wang, Tao, Kuball, Martin
Format: Artigo
Sprog:Inglês
Udgivet: American Chemical Society 2019
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6843706/
https://ncbi.nlm.nih.gov/pubmed/31720504
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.9b01752
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