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Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene
[Image: see text] Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dr...
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| Publicado no: | ACS Omega |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2019
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6843706/ https://ncbi.nlm.nih.gov/pubmed/31720504 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.9b01752 |
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