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Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

[Image: see text] Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dr...

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Detalhes bibliográficos
Publicado no:ACS Omega
Main Authors: Mercado, Elisha, Zhou, Yan, Xie, Yong, Zhao, Qinghua, Cai, Hui, Chen, Bin, Jie, Wanqi, Tongay, Sefaattin, Wang, Tao, Kuball, Martin
Formato: Artigo
Idioma:Inglês
Publicado em: American Chemical Society 2019
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6843706/
https://ncbi.nlm.nih.gov/pubmed/31720504
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.9b01752
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