Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

[Image: see text] Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dr...

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Publicat a:ACS Omega
Autors principals: Mercado, Elisha, Zhou, Yan, Xie, Yong, Zhao, Qinghua, Cai, Hui, Chen, Bin, Jie, Wanqi, Tongay, Sefaattin, Wang, Tao, Kuball, Martin
Format: Artigo
Idioma:Inglês
Publicat: American Chemical Society 2019
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6843706/
https://ncbi.nlm.nih.gov/pubmed/31720504
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.9b01752
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