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Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems
Memristor devices are generally suitable for incorporation in neuromorphic systems as synapses because they can be integrated into crossbar array circuits with high area efficiency. In the case of a two-dimensional (2D) crossbar array, however, the size of the array is proportional to the neural net...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6829311/ https://ncbi.nlm.nih.gov/pubmed/31652510 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203451 |
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