Carrier localization in perovskite nickelates from oxygen vacancies

Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, lead...

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Detalhes bibliográficos
Publicado no:Proc Natl Acad Sci U S A
Main Authors: Kotiuga, Michele, Zhang, Zhen, Li, Jiarui, Rodolakis, Fanny, Zhou, Hua, Sutarto, Ronny, He, Feizhou, Wang, Qi, Sun, Yifei, Wang, Ying, Aghamiri, Neda Alsadat, Hancock, Steven Bennett, Rokhinson, Leonid P., Landau, David P., Abate, Yohannes, Freeland, John W., Comin, Riccardo, Ramanathan, Shriram, Rabe, Karin M.
Formato: Artigo
Idioma:Inglês
Publicado em: National Academy of Sciences 2019
Assuntos:
Physical Sciences
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6825322/
https://ncbi.nlm.nih.gov/pubmed/31611403
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1910490116
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