High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity...

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Udgivet i:Nanomaterials (Basel)
Main Authors: Xiao, Yan, Liu, Lin, Ma, Zhi-Hao, Meng, Bo, Qin, Su-Jie, Pan, Ge-Bo
Format: Artigo
Sprog:Inglês
Udgivet: MDPI 2019
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6780170/
https://ncbi.nlm.nih.gov/pubmed/31454935
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9091198
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