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High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel
Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated. Electroluminescence and X-...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6754497/ https://ncbi.nlm.nih.gov/pubmed/31541127 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-49727-4 |
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