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Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

As an important third-generation semiconductor material, the micro-deformation and removal mechanism of 6H-SiC at the atomic scale are vital for obtaining ultra-smooth and damage-free surface with atomic steps. Due to the difficulties in directly observing the surface/subsurface of nanomachining reg...

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Veröffentlicht in:Nanoscale Res Lett
Hauptverfasser: Meng, Binbin, Yuan, Dandan, Xu, Shaolin
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer US 2019
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6733952/
https://ncbi.nlm.nih.gov/pubmed/31502007
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3123-7
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