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Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP(3) Monolayer from Ab Initio Studies
Using first-principle calculations within density functional theory, we investigate the electronic property and stability of substitutionally doped 2D GeP(3) monolayer with dopants from group III to VI. The conducting properties are found to be dramatically modified by both the doping sites and the...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6733945/ https://ncbi.nlm.nih.gov/pubmed/31502083 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3135-3 |
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