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Strain-induced topological phase transition with inversion of the in-plane electric polarization in tiny-gap semiconductor SiGe monolayer

Our density functional theory calculations show that tiny-gap semiconductor SiGe monolayer is a quantum valley Hall insulator with a spontaneous electric polarization and, under a small biaxial strain, undergoes a topological phase transition between the states with opposite valley Chern numbers. Th...

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Библиографические подробности
Опубликовано в: :Sci Rep
Главные авторы: Lee, Kyu Won, Lee, Cheol Eui
Формат: Artigo
Язык:Inglês
Опубликовано: Nature Publishing Group UK 2020
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Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC7347862/
https://ncbi.nlm.nih.gov/pubmed/32647295
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-68228-3
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