Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Lignende værker

• Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
  af: Ha Quoc Thang Bui, et al.
  Udgivet: (2019-07-01)
• Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers
  af: Jain, Barsha, et al.
  Udgivet: (2021)
• Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum
  af: Velpula, Ravi Teja, et al.
  Udgivet: (2020)
• Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
  af: Nguyen, Hieu Pham Trung, et al.
  Udgivet: (2015)
• A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)
  af: Bai, Jie, et al.
  Udgivet: (2020)