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A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effec...
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| Pubblicato in: | Materials (Basel) |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6695869/ https://ncbi.nlm.nih.gov/pubmed/31357496 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12152391 |
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