Caricamento...
Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory
[Image: see text] In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass su...
Salvato in:
| Pubblicato in: | ACS Omega |
|---|---|
| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
American Chemical Society
2019
|
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6647943/ https://ncbi.nlm.nih.gov/pubmed/31459636 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.8b03301 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|