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Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory
[Image: see text] In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass su...
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| Veröffentlicht in: | ACS Omega |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
American Chemical Society
2019
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| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6647943/ https://ncbi.nlm.nih.gov/pubmed/31459636 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.8b03301 |
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