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β-Ga(2)O(3) Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications
[Image: see text] Steep-slope β-Ga(2)O(3) nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse...
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| Vydáno v: | ACS Omega |
|---|---|
| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
American Chemical Society
2017
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| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6645059/ https://ncbi.nlm.nih.gov/pubmed/31457293 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.7b01289 |
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