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In Situ SiO(2) Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO(x) Atomic Layer Deposition Process
[Image: see text] In this work, an in situ SiO(2) passivation technique using atomic layer deposition (ALD) during the growth of gate dielectric TaSiO(x) on solid-source molecular beam epitaxy grown (100)In(x)Ga(1–x)As and (110)In(x)Ga(1–x)As on InP substrates is reported. X-ray reciprocal space map...
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| Publicat a: | ACS Omega |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
American Chemical Society
2018
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| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6643752/ https://ncbi.nlm.nih.gov/pubmed/31458140 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.8b02314 |
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