Antisymmetric magnetoresistance in van der Waals Fe(3)GeTe(2)/graphite/Fe(3)GeTe(2) trilayer heterostructures

With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe(3)Ge...

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Detalhes bibliográficos
Publicado no:Sci Adv
Main Authors: Albarakati, Sultan, Tan, Cheng, Chen, Zhong-Jia, Partridge, James G., Zheng, Guolin, Farrar, Lawrence, Mayes, Edwin L. H., Field, Matthew R., Lee, Changgu, Wang, Yihao, Xiong, Yiming, Tian, Mingliang, Xiang, Feixiang, Hamilton, Alex R., Tretiakov, Oleg A., Culcer, Dimitrie, Zhao, Yu-Jun, Wang, Lan
Formato: Artigo
Idioma:Inglês
Publicado em: American Association for the Advancement of Science 2019
Assuntos:
Research Articles
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6611684/
https://ncbi.nlm.nih.gov/pubmed/31281884
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.aaw0409
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