Antisymmetric magnetoresistance in van der Waals Fe(3)GeTe(2)/graphite/Fe(3)GeTe(2) trilayer heterostructures

With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe(3)Ge...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Adv
Päätekijät: Albarakati, Sultan, Tan, Cheng, Chen, Zhong-Jia, Partridge, James G., Zheng, Guolin, Farrar, Lawrence, Mayes, Edwin L. H., Field, Matthew R., Lee, Changgu, Wang, Yihao, Xiong, Yiming, Tian, Mingliang, Xiang, Feixiang, Hamilton, Alex R., Tretiakov, Oleg A., Culcer, Dimitrie, Zhao, Yu-Jun, Wang, Lan
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: American Association for the Advancement of Science 2019
Aiheet:
Research Articles
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC6611684/
https://ncbi.nlm.nih.gov/pubmed/31281884
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1126/sciadv.aaw0409
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