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Transport gap in SmB(6) protected against disorder
The inverted resistance method was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstit...
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| Publicado no: | Proc Natl Acad Sci U S A |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6601007/ https://ncbi.nlm.nih.gov/pubmed/31182612 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1901245116 |
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