Transport gap in SmB(6) protected against disorder

The inverted resistance method was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstit...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Proc Natl Acad Sci U S A
Main Authors: Eo, Yun Suk, Rakoski, Alexa, Lucien, Juniar, Mihaliov, Dmitri, Kurdak, Çağlıyan, Rosa, Priscila F. S., Fisk, Zachary
Format: Artigo
Jezik:Inglês
Izdano: National Academy of Sciences 2019
Teme:
Physical Sciences
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC6601007/
https://ncbi.nlm.nih.gov/pubmed/31182612
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1901245116
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