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Steady-State Response of Silicon Radiation Detectors of the Diffused p-n Junction Type to X Rays. I: Photovoltaic Mode of Operation
A relation is derived for the photocurrent produced by x rays in silicon radiation detector cells of the p-n junction type, giving the dependence of the generated photocurrent on exposure rate, photon energy, and electrical and geometrical parameters of the silicon wafer. Silicon radiation detector...
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| Publicado no: | J Res Natl Bur Stand A Phys Chem |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Institute of Standards and Technology
1964
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6592388/ https://ncbi.nlm.nih.gov/pubmed/31834750 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.6028/jres.068A.069 |
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