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Steady-State Response of Silicon Radiation Detectors of the Diffused P-N Junction Type to X rays. II: Photodiode Mode of Operation
The response to x rays of silicon radiation detectors of the p-n junction type was investigated with special consideration of their dependence on the applied voltage. In agreement with theory, the photocurrent, I(g), was found to consist of a voltage-independent part mainly determined by the average...
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| Publicado no: | J Res Natl Bur Stand A Phys Chem |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Institute of Standards and Technology
1966
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6640563/ https://ncbi.nlm.nih.gov/pubmed/31823988 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.6028/jres.070A.015 |
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