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Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces
Amorphous oxide semiconductor (AOS)-based Schottky diodes have been utilized for selectors in crossbar array memories to improve cell-to-cell uniformity with a low-temperature process. However, thermal instability at interfaces between the AOSs and metal electrodes can be a critical issue for the im...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6536494/ https://ncbi.nlm.nih.gov/pubmed/31133709 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-44421-x |
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