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Colossal Permittivity and Low Dielectric Loss of Thermal Oxidation Single-Crystalline Si Wafers
In this work, thin SiO(2) insulating layers were generated on the top and bottom surfaces of single-crystalline silicon plates (n type) by thermal oxidation to obtain an insulator/semiconductor/insulator (ISI) multilayer structure. X-ray diffraction (XRD) pattern and scanning electron microscope (SE...
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| Vydáno v: | Materials (Basel) |
|---|---|
| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6479920/ https://ncbi.nlm.nih.gov/pubmed/30987082 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12071102 |
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